QS5U13TR The ROHM Semiconductor QS5U13TR is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a 2A continuous current rating.
Mfr Part #:

QS5U13TR

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor QS5U13TR is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a 2A continuous current rating.
✓ Total Stock: 6,000 pcs
$ Price Range: $2.27

QS5U13TR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

QS5U13TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

QS5U13TR Description

Short technical summary and product information.

The ROHM Semiconductor QS5U13TR is a single N-Channel MOSFET. It is designed for surface mount applications and comes in a SOT-23-5 Thin, TSOT-23-5 package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 2A at ambient temperature. The on-resistance (Rds On) is a maximum of 100mOhm at 2A drain current and 4.5V gate-source voltage. The gate charge (Qg) is a maximum of 3.9nC at 4.5V Vgs, and the input capacitance (Ciss) is 175pF at 10V Vds.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.25W at ambient temperature. It features a Schottky diode for isolation. The gate-source voltage (Vgs) maximum is ±12V, and the gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA.

 

This component is suitable for various electronic designs requiring a reliable N-Channel MOSFET in a compact surface-mount package.

QS5U13TR Quick Information

Product Type: MOSFET
Canonical Name: QS5U13TR N-Channel MOSFET
Subcategory: Single

QS5U13TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

QS5U13TR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

QS5U13TR Features

  • 30V drain-to-source voltage rating.
  • 2A continuous drain current capability.
  • 100mOhm maximum on-resistance.
  • Surface mount SOT-23-5 package.
  • N-Channel MOSFET technology.

QS5U13TR Applications

  • Suitable for general switching applications.
  • Ideal for power management circuits.
  • Used in compact electronic devices.
  • Component for low-voltage power supplies.

QS5U13TR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the QS5U13TR?

The maximum drain-to-source voltage (Vdss) for the QS5U13TR is 30V.

What is the continuous drain current of the QS5U13TR?

The continuous drain current for the QS5U13TR is 2A at ambient temperature.

What is the on-resistance of the QS5U13TR?

The maximum on-resistance (Rds On) for the QS5U13TR is 100mOhm at a drain current of 2A and gate-source voltage of 4.5V.

What package type is the QS5U13TR available in?

The QS5U13TR is available in a SOT-23-5 Thin, TSOT-23-5 package.

What is the operating temperature range for the QS5U13TR?

The operating temperature range for the QS5U13TR is up to 150°C (TJ).

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