| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
69 pcs
|
69 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Qorvo QPD1000 is a discrete GaN on SiC HEMT RF Power Transistor. It operates across a wide frequency range from 30 MHz to 1.215 GHz, providing a typical output power of 15W (P3dB).
This device features an integrated input matching network for broadband gain and power performance. The output can be matched on-board to optimize power and efficiency for specific frequency bands. With a typical efficiency of 78.2% and a supply voltage of 28V, it is suitable for various RF power applications.
The QPD1000 is housed in a compact 5 x 6 mm leadless SMT DFN plastic package, designed to save space in handheld radios and other compact devices. It is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The QPD1000 operates from 0.03 GHz to 1.215 GHz.
The typical output power (P3dB) for the QPD1000 is 15W.
The QPD1000 requires a supply voltage of 28V.
The QPD1000 is supplied in a 5x6mm DFN plastic package.
The QPD1000 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the QPD1000 is 1 Unlimited.