| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,594 pcs
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7594 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The QM3017AM3 is a high-performance P-channel MOSFET manufactured by UPI Semiconductor Corp. It operates at a maximum voltage of 30V and features advanced trench technology with high cell density, contributing to low on-resistance (Rdson) and gate charge characteristics.
This MOSFET is engineered for fast switching applications and is well-suited for load switching and motor control applications. Its design emphasizes excellent CdV/dt effect decline and super low gate charge, making it efficient for power management tasks.
The QM3017AM3 meets RoHS and Green Product requirements, indicating compliance with environmental standards. It is designed for full-function reliability in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The QM3017AM3 MOSFET has a voltage rating of 30V.
The QM3017AM3 MOSFET is a P-channel device.
The QM3017AM3 MOSFET utilizes advanced high cell density trench technology.
The QM3017AM3 MOSFET offers super low gate charge and fast switching characteristics with excellent CdV/dt effect decline.
Yes, the QM3017AM3 MOSFET meets RoHS3 Compliant requirements.
The Moisture Sensitivity Level (MSL) for the QM3017AM3 MOSFET is 1 Unlimited.