| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,419 pcs
|
9419 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The QM3010D from UBIQ is a high-performance trench N-channel MOSFET characterized by its extreme high cell density. This design provides excellent Rds(on) and gate charge characteristics, making it suitable for most synchronous buck converter applications.
Key electrical specifications include a breakdown voltage of 30V and a continuous drain current of 70A at 25°C. The Rds(on) is rated at a maximum of 7 mOhm at 10V Vgs and 9 mOhm at 4.5V Vgs. The maximum gate-source voltage is ±20V, with a gate threshold voltage of 1.8V.
The QM3010D meets RoHS and Green Product requirements. It is packaged in a TO-252 surface-mount case. Its advanced high cell density trench technology contributes to super low gate charge and excellent CdV/dt effect decline.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.79 | $6.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage breakdown of the QM3010D is 30V.
The QM3010D is packaged in a TO-252 surface-mount package.
The maximum continuous drain current is 70A at 25°C.
The maximum gate-source voltage is ±20V.
The maximum gate threshold voltage is 1.8V.