| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70,000 pcs
|
70000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
226 pcs
|
226 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The UBIQ QM3006M6 is a high-performance N-Channel MOSFET featuring advanced trench technology with extreme high cell density. This design provides excellent Rds(on) and gate charge characteristics, making it suitable for synchronous buck converter applications.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 120A. The on-resistance (Rds(on)) is notably low, measuring 3 mOhm at 10Vgs and 5 mOhm at 4.5Vgs. The gate threshold voltage (Vth) is typically 1.79V, and the maximum gate-source voltage (Vgs) is 20V.
This MOSFET is housed in a DFN8(5X6) package, designed for efficient thermal management and board space saving. The QM3006M6 meets RoHS and Green Product requirements and is 100% EAS guaranteed, ensuring reliability for demanding applications.
The drain-source voltage (Vds) is 30V.
The continuous drain current (Id) is 120A.
The typical Rds(on) is 3 mOhm at Vgs=10V and 5 mOhm at Vgs=4.5V.
The QM3006M6 is available in a DFN8(5X6) package.
The QM3006M6 is an N-Channel MOSFET.
The typical gate threshold voltage (Vth) is 1.79V.
The QM3006M6 uses Trench technology.