QH8MA2TCR The ROHM Semiconductor QH8MA2TCR is a dual N/P-Channel MOSFET designed for surface mounting. It features a 30V drain-source voltage and a maximum Rds On of 35mOhm at 4.5A, 10V.
Mfr Part #:

QH8MA2TCR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor QH8MA2TCR is a dual N/P-Channel MOSFET designed for surface mounting. It features a 30V drain-source voltage and a maximum Rds On of 35mOhm at 4.5A, 10V.
✓ Total Stock: 2,609 pcs
$ Price Range: $1.96

QH8MA2TCR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,609 pcs
2609 pcs On Request 1 On Request On Request 1549+ On Request On Request

QH8MA2TCR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

QH8MA2TCR Description

Short technical summary and product information.

The ROHM Semiconductor QH8MA2TCR is a dual N-Channel and P-Channel MOSFET suitable for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 4.5A for the N-channel and 3A for the P-channel. The device has a low Rds On of 35mOhm (maximum) when tested at 4.5A and 10V Vgs.

 

This MOSFET is designed with a logic level gate, making it compatible with lower gate drive voltages. It operates within a temperature range of -55°C to 150°C (TJ) and comes in a TSMT8 package for surface mounting. The input capacitance (Ciss) is 365pF at 10V Vds, and the gate charge (Qg) is a maximum of 8.4nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.

 

Packaged in an 8-SMD, Flat Lead configuration, the QH8MA2TCR is designed for efficient heat dissipation with a power rating of 1.25W. Its surface mount capability and dual-channel configuration make it a versatile component for power management and switching applications.

QH8MA2TCR Quick Information

Product Type: MOSFET
Canonical Name: QH8MA2TCR N-Channel and P-Channel MOSFET
Subcategory: Dual MOSFET

QH8MA2TCR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

QH8MA2TCR Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

QH8MA2TCR Features

  • Dual N and P-Channel MOSFET.
  • 30V drain-to-source voltage.
  • Low Rds On of 35mOhm.
  • Logic level gate feature.
  • Surface mount TSMT8 package.

QH8MA2TCR Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in low-voltage motor control.
  • Applicable in power management circuits.

QH8MA2TCR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the QH8MA2TCR MOSFET?

The drain-to-source voltage (Vdss) for the QH8MA2TCR is 30V.

What is the maximum Rds On for the QH8MA2TCR MOSFET?

The maximum Rds On for the QH8MA2TCR is 35mOhm at 4.5A, 10V.

What is the operating temperature range of the QH8MA2TCR?

The operating temperature range (TJ) for the QH8MA2TCR is 150°C.

What type of package is the QH8MA2TCR MOSFET in?

The QH8MA2TCR MOSFET is in a TSMT8 package, which is an 8-SMD, Flat Lead type for surface mounting.

Is the QH8MA2TCR MOSFET RoHS compliant?

The RoHS status for the QH8MA2TCR is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the QH8MA2TCR?

The Moisture Sensitivity Level (MSL) for the QH8MA2TCR is 1 Unlimited.

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