| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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424,890 pcs
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424890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
153 pcs
|
153 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor QEB373ZR is an infrared LED emitter designed for various applications requiring IR light. This component operates with a forward voltage of 1.7V and emits light at a wavelength of 875nm. Its radiant intensity is specified at 16mW/sr at 100mA, with a typical viewing angle of 24°.
The QEB373ZR is housed in a 2-SMD, Z-Bend package, suitable for surface mounting. It has a power dissipation of 100mW and can operate within a temperature range of -40°C to 100°C. The component is rated for 5V reverse voltage and 50mA forward current.
This infrared LED emitter is designed for applications where IR detection or signaling is required. Its compact SMD package allows for easy integration into printed circuit boards, making it suitable for automated assembly processes. The RoHS3 compliance indicates adherence to environmental standards for electronic components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range for the QEB373ZR is -40°C to +100°C.
The forward voltage of the QEB373ZR is 1.7V.
The QEB373ZR LED has a wavelength of 875nm.
The radiant intensity of the QEB373ZR is 16mW/sr at 100mA.
The QEB373ZR is available in a 2-SMD, Z-Bend package.
The QEB373ZR is RoHS3 compliant.