| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,280 pcs
|
61280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Current | |
| Emission Angle | |
| Fall Time | |
| Forward Voltage | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Orientation | |
| Pb-Free | |
| Peak Emission Wavelength | |
| Power Dissipation | |
| Radiant Intensity (Ie) Min @ If | |
| Reverse Current | |
| Reverse Voltage | |
| Rise Time | |
| Soldering Temperature (Flow) | |
| Soldering Temperature (Iron) | |
| Storage Temperature | |
| Type | |
| Viewing Angle | |
| Voltage | |
| Wavelength |
The QEB363ZR from On Semiconductor is a subminiature plastic infrared emitting diode designed for surface mount applications. It features a clear water lens and a GaAs emitter with a peak emission wavelength of 940nm.
This diode has a narrow emission angle of 24° and a typical radiant intensity of 8mW/sr at 100mA. The forward voltage is a maximum of 1.6V, and it can handle a continuous forward current of up to 50mA with a power dissipation of 100mW. The operating temperature range is -40°C to 100°C.
Packaged in a 2-SMD, Z-Bend configuration, the QEB363ZR is suitable for automated assembly processes. It is also noted as being Pb-Free and Halide Free.
This component is matched with the QSB363 photosensor, suggesting potential applications in sensing and control systems where infrared detection is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak emission wavelength is 940nm.
The emission angle is ±12°.
The maximum forward voltage is 1.6V.
The minimum radiant intensity is 8mW/sr.
The operating temperature range is -40°C to 100°C.
It is in a 2-SMD, Z-Bend package.
Yes, it is RoHS3 Compliant.