| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The ON Semiconductor QEB363 is a subminiature plastic infrared emitting diode designed for various applications requiring IR light emission. It features a peak emission wavelength of 940nm and a narrow emission angle of 24°, making it suitable for focused light transmission.
This diode operates with a continuous forward current of 50mA and a forward voltage of 1.6V. It offers a radiant intensity of 8mW/sr at 100mA. The device is housed in a T-3/4 axial package and is designed for through-hole mounting.
Key specifications include an operating temperature range of -40°C to 100°C and a storage temperature range of -40°C to 100°C. It is Pb-Free and Halide Free, with RoHS3 compliance.
Typical applications for this infrared emitting diode include proximity sensing, object detection, and other optoelectronic systems where a specific IR wavelength and controlled emission angle are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak emission wavelength is 940nm.
The emission angle is ±12°.
The forward voltage is 1.6V.
The operating temperature range is -40°C to 100°C.
The QEB363 comes in a T-3/4 axial package.
Yes, the QEB363 is RoHS3 Compliant.