| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Centronic QD100-0 is a silicon photodiode from the Series 0, designed for operation at up to 30V reverse bias voltage. It is tailored for applications where low capacitance and high speed are important.
This photodiode features an active area of 100 mm² and exhibits a typical responsivity of 0.54 A/W at 900 nm. The dark current at 30V reverse bias is typically 30 nA, with a maximum capacitance of 130 pF. Its typical NEP is 2.5 pW/√Hz, and it has a fast risetime of 13 ns at 900 nm with a 50 Ohm load.
The spectral range for this detector is from 430-1064 nm, with peak responsivity in the 780-950 nm range. It is housed in a TO8 package.
Absolute maximum ratings include a DC reverse voltage of 50V, peak pulse current of 200mA (1 µs, 1% duty cycle), and peak DC current of 10mA. The operating temperature range is -25°C to +75°C, and storage temperature range is -45°C to +100°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.79 | $6.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical responsivity of the QD100-0 photodiode at 900 nm is 0.54 A/W.
The typical risetime of the QD100-0 photodiode is 13 ns.
The operating temperature range for the QD100-0 photodiode is -25°C to +75°C.
The spectral range of the QD100-0 photodiode is from 430-1064 nm.
The QD100-0 photodiode is supplied in a TO8 package.