| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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980 pcs
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980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor PZTA92T1 is a PNP silicon transistor designed for high voltage applications. It offers a maximum collector-emitter voltage (VCEO) of -300 Vdc and a collector-base voltage (VCBO) of -300 Vdc. The device can handle a continuous collector current (IC) of up to -50 mAdc and has a total power dissipation of 1.5 W at 25°C ambient temperature.
Key electrical characteristics include a minimum DC current gain (hFE) of 25 at IC = -1.0 mAdc and VCE = -10 Vdc, and a current-gain bandwidth product (fT) of 50 MHz at IC = -10 mAdc and VCE = -20 Vdc. The transistor is available in a surface-mount SOT-223 package, making it suitable for various electronic circuits requiring high voltage switching or amplification.
This transistor is suitable for applications requiring high voltage handling capabilities. Its PNP silicon construction and SOT-223 package facilitate integration into compact electronic designs. The device operates within a storage temperature range of -65 to 150°C and a junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZTA92T1 is -300 Vdc.
The maximum continuous collector current (IC) for the PZTA92T1 is -50 mAdc.
The PZTA92T1 transistor is supplied in a SOT-223-4 surface-mount package.
The current-gain bandwidth product (fT) for the PZTA92T1 is a minimum of 50 MHz at IC = -10 mAdc and VCE = -20 Vdc.
The RoHS status of the PZTA92T1 is RoHS3 Compliant.