PZTA42T1G The PZTA42T1G is an NPN silicon transistor from On Semiconductor designed for high voltage applications. It features a 300V collector-emitter voltage and a 500mA collector current.
Mfr Part #:

PZTA42T1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The PZTA42T1G is an NPN silicon transistor from On Semiconductor designed for high voltage applications. It features a 300V collector-emitter voltage and a 500mA collector current.
Total Stock: 100,390 pcs
$ Price Range: $0.48

PZTA42T1G Available from 8 distributors

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Non-Authorised

PZTA42T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (DC)
Collector Emitter Voltage (open base)
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Emitter-Base Cutoff Current
Feedback Capacitance
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Storage Temperature Range
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
fT (Minimum @ IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT (Minimum)
hFE (Minimum @ @ 30 mA, 10 V)
hFE (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc)
hFE (Minimum @ IC = 10 mAdc, VCE = 10 Vdc)
hFE (Minimum @ IC = 30 mAdc, VCE = 10 Vdc)

PZTA42T1G Description

Short technical summary and product information.

The PZTA42T1G is a high voltage NPN silicon transistor manufactured by On Semiconductor. It is designed for surface mount applications and comes in a SOT-223 package.

 

Key electrical characteristics include a maximum collector-emitter voltage of 300V and a continuous collector current of 500mA. The transistor offers a DC current gain (hFE) of up to 40 at 30mA and 10V, with a Vce(sat) of 500mV at 2mA/20mA. Its current-gain bandwidth product (fT) is 50MHz.

 

This device is complement to the PZTA92T1G. It is Pb-free, halogen-free, and RoHS compliant. The operating junction temperature range is -65°C to +150°C.

 

With its high voltage capability and surface mount package, the PZTA42T1G is suitable for various general-purpose amplification and switching applications where high voltage breakdown is required.

PZTA42T1G Quick Information

Product Type: NPN Transistor
Canonical Name: PZTA42T1G NPN High Voltage Transistor
Subcategory: Single

PZTA42T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PZTA42T1G Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZTA42T1G Features

  • High voltage NPN silicon transistor.
  • 300V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • SOT-223 surface mount package.
  • Pb-free and RoHS compliant.

PZTA42T1G Applications

  • High-voltage switching circuits
  • Power amplification applications
  • Compact circuit design in SOT-223 package
  • High-voltage signal amplification

PZTA42T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PZTA42T1G?

The maximum collector-emitter voltage (open base) for the PZTA42T1G is 300 Vdc.

What is the continuous collector current of the PZTA42T1G transistor?

The PZTA42T1G transistor has a continuous collector current of 500 mAdc.

What is the operating temperature range for the PZTA42T1G?

The operating junction temperature range for the PZTA42T1G is -65°C to +150°C.

What package type is the PZTA42T1G supplied in?

The PZTA42T1G is supplied in a SOT-223 (TO-261) surface mount package.

Is the PZTA42T1G RoHS compliant?

Yes, the PZTA42T1G is RoHS3 compliant.

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