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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,384 pcs
|
5384 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,090 pcs
|
1090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| Feedback Capacitance | |
| Frequency | |
| Halogen Free | |
| IC (Maximum) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Pd (Maximum @ Ta=25 °C) | |
| Pd (Maximum) | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| VCEO (Maximum @ Open base) | |
| VCEO (Maximum) | |
| Vce Saturation (Max) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Minimum @ IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) | |
| fT (Minimum) | |
| hFE (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 10 mAdc, VCE = 10 Vdc) | |
| hFE (Minimum @ IC = 30 mAdc, VCE = 10 Vdc) | |
| hfe (Minimum @ IC = 30 mA, VCE = 10 V) |
The PZTA42 is a high voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for surface mount applications and comes in a SOT-223-4 package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. The device offers a DC current gain (hFE) of 40 at 30mA and 10V, with a current-gain bandwidth product (fT) of 50MHz.
This transistor is suitable for various applications requiring high voltage switching or amplification. Its operating temperature range is -55°C to +150°C. The device is Pb-free and halogen-free, complying with RoHS standards.
Mounting is facilitated by its surface mount capability in the TO-261-4, TO-261AA package. The thermal resistance from junction to ambient is 83.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZTA42 transistor is 300 Vdc.
The PZTA42 transistor has a continuous collector current (IC) rating of 500 mAdc.
The total power dissipation (PD) for the PZTA42 transistor is 1.5 W at 25°C.
The operating temperature range for the PZTA42 transistor is -55°C to +150°C.
The PZTA42 transistor is supplied in a SOT-223-4 package, also referred to as TO-261-4 or TO-261AA.
Yes, the PZTA42 transistor is RoHS3 compliant.
The moisture sensitivity level (MSL) for the PZTA42 transistor is 1.