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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Breakdown Voltage (Minimum @ IC = 100 µA, VBE = 0) | |
| Breakdown Voltage (Minimum @ IC=100 μA, IE=0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Current | |
| Current Gain (Minimum @ 100 mA, 5 V) | |
| Current Gain (Minimum @ IC = 10 mA, VCE = 5.0 V) | |
| Current Gain (Minimum @ IC = 100 mA, VCE = 5.0 V) | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Leakage Current (Maximum @ VCB = -80 V, IE = 0) | |
| Leakage Current (Maximum @ VCE = 80 V, VBE = 0) | |
| Leakage Current (Maximum @ VEB = 10 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Saturation Voltage (Maximum @ 100 µA, 100 mA) | |
| Saturation Voltage (Maximum @ IC = 10 mA, IB = 0.01 mA) | |
| Saturation Voltage (Maximum @ IC = 100 mA, IB = 0.1 mA) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor PZTA29 is an NPN Darlington transistor designed for applications requiring extremely high current gain at collector currents up to 500 mA. This device offers a collector-emitter voltage of 100V and a continuous collector current of 800mA.
Key electrical characteristics include a high DC current gain (hFE) of 10,000 at 100mA and 5V, and a current gain bandwidth product (fT) of 125MHz. The saturation voltage (VCE(sat)) is a maximum of 1.5V at 100mA collector current and 0.1mA base current.
This transistor is housed in a SOT-223-4 surface mount package, making it suitable for various electronic designs. It operates within a wide temperature range of -55°C to 150°C.
The PZTA29 is sourced from process 03 and is described as a Pb-Free device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the PZTA29 is 100V.
The PZTA29 has a continuous collector current (IC) rating of 800mA.
The operating and storage junction temperature range for the PZTA29 is -55°C to 150°C.
The DC current gain (hFE) of the PZTA29 is a minimum of 10,000 at 100mA collector current and 5V VCE.
The PZTA29 is supplied in a SOT-223-4 package.