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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,800 pcs
$0.44
|
2800 pcs |
$0.44
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The PZTA06 from ON Semiconductor is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. This device features a maximum collector-emitter voltage rating of 80V and can handle a continuous collector current of up to 500mA.
With a DC current gain (hFE) of 100 at 100mA and 1V, and a Vce saturation of 250mV at 10mA and 100mA, the PZTA06 provides reliable performance for switching and amplification tasks. It operates at a frequency of 100MHz and has a power dissipation rating of 1W.
The transistor is packaged in a TO-261-4, TO-261AA (SOT-223-4) configuration, designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ).
This component is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PZTA06 transistor has a maximum collector-emitter voltage of 80V.
The PZTA06 transistor can handle a maximum continuous collector current of 500mA.
The PZTA06 transistor has a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage.
The PZTA06 transistor is supplied in a TO-261-4, TO-261AA (SOT-223-4) package for surface mounting.
The PZTA06 transistor operates within a temperature range of -55°C to 150°C (TJ).