PZT751T1G

The ON Semiconductor PZT751T1G is a PNP Silicon Planar Epitaxial transistor designed for use in industrial and consumer applications. This device is housed in a SOT-223 package, suitable for medium power surface mount applications.

Key electrical specifications include a maximum collector-emitter voltage of -60 Vdc and a maximum collector current of -2.0 Adc. The transistor offers a total power dissipation of 0.8 W at 25°C and a gain bandwidth product of 75 MHz. The DC current gain (hFE) is a minimum of 75 at 1A collector current and 2V Vce, with a Vce saturation of 500mV at 200mA base current and 2A collector current.

The SOT-223 package ensures level mounting, improving thermal conduction and allowing visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die. The device operates within a junction temperature range of -65°C to 150°C and has a thermal resistance of 156 °C/W from junction-to-ambient in free air.

This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. Its NPN complement is the PZT651T1G. The S prefix variant is AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.