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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
15,020 pcs
|
15020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
343 pcs
|
343 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
92 pcs
|
92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Cutoff Current | |
| Breakdown Voltage (Minimum @ IC = -100 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector Current | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Continuous Collector Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction Temperature | |
| Maximum Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance from Junction-to-Ambient in Free Air | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum) |
The ON Semiconductor PZT651T1G is an NPN Silicon Planar Epitaxial Transistor designed for industrial and consumer applications. It is housed in a SOT-223 package, suitable for medium power surface mount applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 Vdc, a continuous collector current (IC) of 2 Adc, and a maximum power dissipation (PD) of 800 mW. The DC current gain (hFE) is a minimum of 75 at 1A and 2V, with a gain bandwidth product (fT) of 75MHz.
The transistor operates within a junction temperature range of -65°C to 150°C. The SOT-223 package ensures level mounting for improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die.
This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for applications requiring environmentally conscious components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZT651T1G is 60 Vdc.
The PZT651T1G can handle a maximum continuous collector current of 2 A.
The maximum power dissipation for the PZT651T1G is 800 mW.
The junction operating temperature for this transistor ranges from -65°C to 150°C.
The PZT651T1G is supplied in a SOT-223 (TO-261) package.
Yes, the PZT651T1G is RoHS3 Compliant.