| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PZT651T1 is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for various electronic applications requiring reliable switching and amplification. It offers a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 2A.
The transistor has a DC current gain (hFE) of at least 75 at 1A and 2V, with a transition frequency of 75MHz. The Vce saturation voltage is a maximum of 500mV at 200mA and 2A, ensuring efficient operation. The maximum power dissipation is rated at 800mW, and it can operate at junction temperatures up to 150°C.
Packaged in a surface-mount SOT-223 case, the PZT651T1 is suitable for automated assembly processes. Its RoHS3 compliant status indicates adherence to environmental regulations regarding hazardous substances. The component is also classified as REACH Unaffected and has a Moisture Sensitivity Level (MSL) of 1.
This transistor is a good choice for designers needing a robust NPN transistor for general-purpose amplification and switching tasks within its specified electrical and thermal limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOT-223 surface-mount package.
150°C.
2A.
Minimum 75 at 1A collector current and 2V collector-emitter voltage.
75MHz.
500mV maximum at 200mA base current and 2A collector current.