PZT651T1 The PZT651T1 is an NPN bipolar transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage and a 2A maximum collector current, housed in a SOT-223 package.
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PZT651T1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The PZT651T1 is an NPN bipolar transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage and a 2A maximum collector current, housed in a SOT-223 package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.33

PZT651T1 Available from 1 distributor

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✓ Non-Authorised
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

PZT651T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PZT651T1 Description

Short technical summary and product information.

The PZT651T1 is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for various electronic applications requiring reliable switching and amplification. It offers a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 2A.

 

The transistor has a DC current gain (hFE) of at least 75 at 1A and 2V, with a transition frequency of 75MHz. The Vce saturation voltage is a maximum of 500mV at 200mA and 2A, ensuring efficient operation. The maximum power dissipation is rated at 800mW, and it can operate at junction temperatures up to 150°C.

 

Packaged in a surface-mount SOT-223 case, the PZT651T1 is suitable for automated assembly processes. Its RoHS3 compliant status indicates adherence to environmental regulations regarding hazardous substances. The component is also classified as REACH Unaffected and has a Moisture Sensitivity Level (MSL) of 1.

 

This transistor is a good choice for designers needing a robust NPN transistor for general-purpose amplification and switching tasks within its specified electrical and thermal limits.

PZT651T1 Quick Information

Product Type: Bipolar Transistor
Series: PZT
Canonical Name: PZT651T1 NPN Bipolar Transistor
Subcategory: Single BJT

PZT651T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PZT651T1 Estimated Pricing

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1+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZT651T1 Features

  • NPN bipolar transistor for general applications.
  • 60V collector-emitter breakdown voltage.
  • 2A maximum collector current.
  • Surface mount SOT-223 package.
  • RoHS3 compliant for environmental standards.

PZT651T1 Applications

  • Suitable for voltage regulation circuits.
  • Used for surge protection applications.
  • Effective in clamping voltage spikes.
  • Applicable in signal conditioning systems.

PZT651T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the PZT651T1?

60V.

What is the package type of the PZT651T1?

SOT-223 surface-mount package.

What is the maximum operating junction temperature?

150°C.

What is the maximum collector current?

2A.

What is the DC current gain (hFE)?

Minimum 75 at 1A collector current and 2V collector-emitter voltage.

What is the transition frequency?

75MHz.

What is the collector-emitter saturation voltage?

500mV maximum at 200mA base current and 2A collector current.

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