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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
93,020 pcs
|
93020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
41 pcs
|
41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector Current - Continuous | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction to Ambient Thermal Resistance | |
| Junction to Lead Thermal Resistance | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Power Dissipation (Unspecified condition) | |
| Saturation Voltage (Maximum @ IC = 50 mAdc, IB = 5.0 mAdc) | |
| Saturation Voltage (Nominal @ IC = 10 mAdc, IB = 1.0 mAdc) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The PZT3904T1G is a general-purpose NPN silicon transistor manufactured by ON Semiconductor. It is designed to handle a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA.
Key electrical characteristics include a DC current gain (hFE) of 100 minimum at 10mA and 1V, a collector-emitter saturation voltage of 0.3V maximum at 5mA and 50mA, and a base-emitter saturation voltage of 0.65V nominal at 10mA and 1mA. The transistor exhibits a gain-bandwidth product (fT) of 300MHz and an output capacitance (Cobo) of 5pF maximum at 1MHz.
This device operates within a junction and storage temperature range of -55°C to 150°C. It has a total power dissipation of 1.5W at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 83.3°C/W and a junction-to-lead thermal resistance of 35°C/W.
The PZT3904T1G is supplied in a SOT-223 surface mount package. It is Pb-Free and Halogen Free, meeting RoHS 3 compliance standards. The Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZT3904T1G is 40 Vdc.
The PZT3904T1G has a continuous collector current rating of 200 mAdc.
The minimum DC current gain (hFE) for the PZT3904T1G at 10mA and 1V is 100.
The operating and storage temperature range for this transistor is -55°C to 150°C.
The PZT3904T1G is supplied in a SOT-223 package.
Yes, the PZT3904T1G is RoHS 3 compliant.