PZT2907AT3G The PZT2907AT3G is a PNP Silicon Epitaxial transistor from On Semiconductor, designed for linear and switching applications. It comes in a SOT-223 package.
Mfr Part #:

PZT2907AT3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The PZT2907AT3G is a PNP Silicon Epitaxial transistor from On Semiconductor, designed for linear and switching applications. It comes in a SOT-223 package.
Total Stock: 35,020 pcs
$ Price Range: $0.48

PZT2907AT3G Available from 2 distributors

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25,020 pcs
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10,000 pcs
10000 pcs On Request 1 On Request On Request 1606+ On Request On Request

PZT2907AT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0)
Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0)
Collector Current Cutoff
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PZT2907AT3G Description

Short technical summary and product information.

The PZT2907AT3G is a PNP Silicon Epitaxial transistor manufactured by On Semiconductor. This device is designed for use in both linear and switching applications. It is housed in a SOT-223 package, which is suitable for medium power surface mount applications.

 

Key electrical specifications include a collector-emitter voltage of -60 Vdc and a continuous collector current of -600 mAdc. The transistor type is PNP, with a typical DC current gain (hFE) of 100 at 150mA and 10V. The saturation voltage (Vce) is a maximum of 1.6V at 50mA and 500mA. It operates at frequencies up to 200MHz.

 

The device has a total power dissipation of 1.5 W at 25°C ambient temperature. The operating and storage temperature range is from -65°C to +150°C. The SOT-223 package is designed for improved thermal conduction and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die.

 

This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

PZT2907AT3G Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP Silicon Epitaxial Transistor
Subcategory: PNP

PZT2907AT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

PZT2907AT3G Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZT2907AT3G Features

  • PNP Silicon Epitaxial transistor.
  • Designed for linear and switching applications.
  • Medium power surface mount SOT-223 package.
  • Rated for -60V collector-emitter voltage.
  • Continuous collector current of 600mA.

PZT2907AT3G Applications

  • Suitable for linear applications.
  • Suitable for switching applications.
  • Designed for medium power applications.
  • Automotive and other applications.

PZT2907AT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PZT2907AT3G?

-60 Vdc

What is the continuous collector current of the PZT2907AT3G?

600 mAdc

What is the operating temperature range for this transistor?

-65°C ~ 150°C

What package type is the PZT2907AT3G supplied in?

SOT-223

Is the PZT2907AT3G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the PZT2907AT3G?

1 Unlimited

What is the typical DC current gain (hFE) for the PZT2907AT3G?

100 @ 150mA, 10V

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