PZT2907AT1G The ON Semiconductor PZT2907AT1G is a PNP Silicon Epitaxial transistor designed for linear and switching applications. It features a 60V collector-emitter voltage and 600mA continuous current in a SOT-223 package.
Mfr Part #:

PZT2907AT1G

Available from 10 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor PZT2907AT1G is a PNP Silicon Epitaxial transistor designed for linear and switching applications. It features a 60V collector-emitter voltage and 600mA continuous current in a SOT-223 package.
Total Stock: 212,502 pcs
$ Price Range: $0.48

PZT2907AT1G Available from 10 distributors

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PZT2907AT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IC = 10 mAdc, IE = 0)
Breakdown Voltage (Minimum @ IE = 10 mAdc, IC = 0)
Collector-Base Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PZT2907AT1G Description

Short technical summary and product information.

The ON Semiconductor PZT2907AT1G is a PNP Silicon Epitaxial transistor designed for use in linear and switching applications. This device is housed in a SOT-223 package, suitable for medium power surface mount applications.

 

Key electrical characteristics include a collector-emitter voltage of 60V and a continuous collector current of 600mA. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. The saturation voltage (Vce) is a maximum of 1.6V at 50mA and 500mA, with a frequency rating of 200MHz.

 

Thermal specifications include a total device dissipation of 1.5W at 25°C ambient temperature and a junction-to-ambient thermal resistance of 83.3°C/W. The operating and storage temperature range is -65°C to +150°C.

 

The SOT-223 package is designed for improved thermal conduction and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

PZT2907AT1G Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP Silicon Epitaxial Transistor PZT2907A
Subcategory: Single

PZT2907AT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PZT2907AT1G Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZT2907AT1G Features

  • PNP Silicon Epitaxial transistor
  • 60V Collector-Emitter Voltage
  • 600mA Continuous Collector Current
  • SOT-223 Surface Mount Package
  • Pb-Free, Halogen Free, RoHS Compliant

PZT2907AT1G Applications

  • Suitable for linear switching applications.
  • Used in automotive and industrial circuits.
  • Ideal for high-speed switching in electronic devices.
  • Applicable in power regulation and control circuits.

PZT2907AT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PZT2907AT1G?

The maximum collector-emitter voltage is -60 Vdc.

What is the continuous collector current rating?

The continuous collector current is -600 mAdc.

What is the operating temperature range?

The operating temperature range is -65°C to +150°C.

What package type is the PZT2907AT1G supplied in?

The PZT2907AT1G is supplied in a SOT-223 package.

Is the PZT2907AT1G RoHS compliant?

Yes, the PZT2907AT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the NPN complement for the PZT2907AT1G?

The NPN complement is PZT2222AT1.

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