PZT2222A135

The PZT2222A135 is an NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors, designed for switching and linear amplification applications. It is housed in a compact SOT-223 plastic package, suitable for surface mount designs.

This transistor features a high collector current capability of up to 600 mA and a low collector-emitter voltage rating of 40 V. Key electrical characteristics include a DC current gain (hFE) ranging from 35 to 300 depending on the operating conditions, and a transition frequency (fT) of 300 MHz. The device also offers low saturation voltages, VCEsat of 300 mV at 150 mA and 1 V at 500 mA, and VBEsat between 0.6 V and 1.2 V at 150 mA.

With a power dissipation rating of 1.15 W at 25°C ambient temperature (on a suitable PCB), the PZT2222A135 operates across a wide temperature range from -65°C to +150°C. Its PNP complement is the PZT2907A. The SOT-223 package is designed for efficient heat dissipation when mounted on a PCB with adequate collector pad area.

Applications for the PZT2222A135 include general-purpose switching circuits and linear amplification stages where its combination of current handling, voltage rating, and package type are beneficial. The PNP complement, PZT2907A, can be used in complementary push-pull configurations.