PZ28F064M29EWTA The Micron Technology PZ28F064M29EWTA is a 64Mbit Parallel NOR Flash memory device. It features a 60ns access time and operates with a supply voltage range of 2.7V to 3.6V.
Mfr Part #:

PZ28F064M29EWTA

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology PZ28F064M29EWTA is a 64Mbit Parallel NOR Flash memory device. It features a 60ns access time and operates with a supply voltage range of 2.7V to 3.6V.
✓ Total Stock: 3,109 pcs
$ Price Range: $1.28

PZ28F064M29EWTA Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,109 pcs
1109 pcs On Request 1 On Request On Request 1841+ On Request On Request

PZ28F064M29EWTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

PZ28F064M29EWTA Description

Short technical summary and product information.

The Micron Technology PZ28F064M29EWTA is a 64Mbit Parallel NOR Flash embedded memory IC. It offers a fast page access time of 25ns and asynchronous random or page read capabilities. The device supports a supply voltage from 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to 3.6V.

 

Key features include a 60ns random access time for BGA packages and 70ns for TSOP packages. It supports a 256-word maximum program buffer, with program times as fast as 0.31µs per byte when using VPPH. Memory organization options include 128 main blocks of 128KB for 128Mb devices, or 128 main blocks of 64KB for 64Mb devices.

 

This NOR Flash memory is designed for reliability, featuring 100,000 minimum erase cycles per block and 20 years of data retention. It is compliant with JESD47H standards and is available in a 48-BGA (6x8) surface mount package.

 

The PZ28F064M29EWTA is suitable for applications requiring high-speed, non-volatile storage. Its robust design and features make it a reliable choice for various embedded systems.

PZ28F064M29EWTA Quick Information

Product Type: Flash Memory
Canonical Name: 64Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

PZ28F064M29EWTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PZ28F064M29EWTA Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZ28F064M29EWTA Features

  • 64Mbit Parallel NOR Flash memory.
  • Fast 60ns random access time.
  • Wide 2.7V to 3.6V supply voltage.
  • Reliable 100,000 erase cycles.
  • Compact 48-BGA surface mount package.

PZ28F064M29EWTA Applications

  • Ideal for embedded system storage.
  • Suitable for high-speed data logging.
  • Used in industrial control systems.
  • Applicable for firmware storage.

PZ28F064M29EWTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range?

Core supply: 2.7V to 3.6V. I/O buffer supply: 1.65V to 3.6V.

What package is available?

48-BGA (6x8mm) surface mount package.

What is the operating temperature range?

-40°C to 85°C ambient.

What is the random access time?

60ns for BGA package, 70ns for TSOP package.

What is the program time per byte?

0.56µs per byte using 256-word buffer without VPPH, 0.31µs per byte with VPPH.

How many erase cycles are supported?

100,000 erase cycles per block, JESD47H compliant.

What is the data retention?

20 years typical.

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