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786 pcs
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786 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology PZ28F064M29EWLA is a 64Mbit Parallel NOR Flash memory integrated circuit designed for embedded systems. It operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.
This NOR Flash memory offers a fast 60ns random access time and supports asynchronous random or page reads. It features a 64Mbit density organized as 8M x 8 or 4M x 16 bits. The device includes embedded program/erase controllers with suspend and resume capabilities, along with unlock bypass, block erase, and chip erase functions.
Packaged in a 48-VFBGA, the PZ28F064M29EWLA is designed for surface mount applications. It operates within an ambient temperature range of -40°C to 85°C. The memory boasts 100,000 minimum erase cycles per block and 20 years of typical data retention, making it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The core supply voltage (VCC) is 2.7V to 3.6V. The I/O buffer supply (VCCQ) is 1.65V to 3.6V, allowing interface with 1.8V or 3.3V logic.
It is available in a 48-VFBGA (48-ball Very Fine Pitch Ball Grid Array) package with a 6x8 mm body. The supplier device package is designated 48-BGA (6x8).
The operating temperature range (TA) is -40°C to +85°C.
The typical access time is 60 ns for the BGA package (per existing database). The datasheet also lists 70 ns typical for TSOP packages, but the part is BGA so 60 ns is the relevant value.
It supports a minimum of 100,000 erase cycles per block.
The typical data retention is 20 years.
It can be configured as 8M x 8 (8-megabyte) or 4M x 16 (8-megabyte using 16-bit words). The device has 128 main blocks of 128 KB each for the 128Mb version, but this part is 64Mb with correspondingly fewer blocks (though not explicitly listed).