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PZ28F064M29EWBA The Micron Technology PZ28F064M29EWBA is a 64Mbit Parallel NOR Flash Embedded Memory. It operates with a supply voltage of 2.7V to 3.6V and features a 60ns access time.
Mfr Part #:

PZ28F064M29EWBA

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology PZ28F064M29EWBA is a 64Mbit Parallel NOR Flash Embedded Memory. It operates with a supply voltage of 2.7V to 3.6V and features a 60ns access time.
✓ Total Stock: 9,040 pcs
$ Price Range: $1.28

PZ28F064M29EWBA Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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9,040 pcs
On Request
9040 pcs On Request 1 On Request On Request On Request On Request On Request
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PZ28F064M29EWBA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time
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PZ28F064M29EWBA Description

Short technical summary and product information.

The Micron Technology PZ28F064M29EWBA is a 64Mbit Parallel NOR Flash Embedded Memory. It utilizes FLASH - NOR technology and operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.

 

This memory device offers a page access time of 25ns and a random access time of 60ns for BGA packages. It supports asynchronous random or page reads and features a 256-word maximum program buffer. Program times are as fast as 0.31µs per byte when using VPPH.

 

The memory organization varies by density, with the 64Mb version featuring 128 main blocks of 64KB each. It includes embedded program/erase algorithms, suspend/resume capabilities, and various protection features like unlock bypass, block erase, chip erase, and software/password protection. The device is compliant with JESD47H, offering 100,000 minimum erase cycles per block and 20 years of data retention.

 

Packaged in a 48-VFBGA, the PZ28F064M29EWBA is designed for surface mount applications and operates in an ambient temperature range of -40°C to +85°C. It is manufactured using 65nm single-bit cell process technology and is available in green, RoHS-compliant, and halogen-free packages.

PZ28F064M29EWBA Quick Information

Product Type: Flash Memory
Canonical Name: Micron Technology PZ28F064M29EWBA Parallel NOR Flash Embedded Memory
Subcategory: NOR

PZ28F064M29EWBA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PZ28F064M29EWBA Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

PZ28F064M29EWBA Features

  • 64Mbit Parallel NOR Flash memory.
  • 2.7V to 3.6V supply voltage.
  • 60ns random access time.
  • 48-VFBGA surface mount package.
  • 100,000 minimum erase cycles per block.

PZ28F064M29EWBA Applications

  • Embedded systems requiring non-volatile storage.
  • Industrial control applications.
  • Automotive electronics.
  • Consumer electronics devices.

PZ28F064M29EWBA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the PZ28F064M29EWBA?

The memory size is 64Mbit.

What is the operating voltage range for this flash memory?

The operating voltage range is 2.7V to 3.6V for program, erase, and read operations.

What is the access time for the PZ28F064M29EWBA?

The random access time is 60ns for BGA packages.

What type of package is the PZ28F064M29EWBA in?

It comes in a 48-VFBGA package.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

How many erase cycles can each block withstand?

Each block can withstand a minimum of 100,000 erase cycles.

What is the data retention period for this memory?

The typical data retention period is 20 years.

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