| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PXT8050 is an NPN bipolar transistor manufactured by Changjing Electronics Technology (CJ). It is designed for various electronic applications requiring a reliable switching or amplification component.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 1.5A. The device offers a maximum power dissipation of 0.5W. The DC current gain (hFE) ranges from 120 to 400 at IC=100mA and VCE=1V, with a minimum hFE of 40 at IC=800mA and VCE=1V. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.5V at IC=800mA and IB=80mA.
This transistor operates within a storage temperature range of -55°C to 150°C. It is packaged in a SOT-89 (SOT-89-3) surface-mount case, suitable for automated assembly processes.
The PXT8050 is a complementary part to the PXT8550 and is suitable for applications where these specifications are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PXT8050 transistor is 25V.
The PXT8050 has a continuous collector current rating of 1.5A.
The PXT8050 transistor has a maximum power dissipation of 0.5W.
The PXT8050 transistor is available in a SOT-89 package.
The PXT8050 has an operating temperature range of -55°C to 150°C.
The DC current gain (hFE) of the PXT8050 at IC=100mA and VCE=1V ranges from 120 to 400.
The transition frequency (fT) of the PXT8050 is 100MHz.