| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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670 pcs
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670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PXT2222A,115 is a general-purpose NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a collector-emitter breakdown voltage of 40V and can handle a maximum continuous collector current of 600mA. The transistor has a DC current gain (hFE) of 100 at 150mA and 10V, with a transition frequency of 300MHz.
This device is housed in a TO-243AA (SOT-89) surface-mount package, making it suitable for automated assembly processes. The maximum power dissipation is 1.1W, and it operates at temperatures up to 150°C.
Key electrical characteristics include a Vce saturation of 1V at 50mA/500mA and a collector cutoff current of 10nA. The PXT2222A,115 is qualified for automotive applications and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the PXT2222A,115 is 600mA.
The collector-emitter breakdown voltage (Vce) for the PXT2222A,115 is 40V.
The minimum DC current gain (hFE) for the PXT2222A,115 is 100 at 150mA and 10V.
The PXT2222A,115 can operate at temperatures up to 150°C.
The PXT2222A,115 is available in a TO-243AA (SOT-89) package.
The transition frequency (fT) for the PXT2222A,115 is 300MHz.