| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The Nexperia PUMH9 is an NPN/NPN Resistor-Equipped Double Transistor (RET) designed for digital applications in automotive and industrial segments. This component simplifies circuit design and reduces component count due to its built-in bias resistors.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and an output current (IO) capability of 100mA per transistor. The integrated bias resistors have a typical value of 10 kΩ for R1, with a typical R2/R1 ratio of 4.7.
The PUMH9 is housed in a very small SOT363-3 (SC-88) surface-mounted device (SMD) plastic package. This compact form factor, combined with its integrated functionality, helps reduce pick and place costs in manufacturing.
This transistor serves as a cost-saving alternative for BC847 series in digital applications, suitable for controlling IC inputs and switching loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.79 | $6.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PUMH9 is 50V.
The maximum output current (IO) for each transistor in the PUMH9 is 100mA.
The R1 bias resistor in the PUMH9 has a typical value of 10 kΩ.
The PUMH9 is supplied in a SOT363-3 (SC-88) surface-mounted device (SMD) plastic package.