| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 1428+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The PUMD12115 is a dual NPNP transistor array from NXP Semiconductors, designed for general purpose switching and amplification. It integrates two transistors with a typical input resistor of 47 kohm and a resistor ratio of 1. The device offers a minimum DC current gain (hFE) of 80 at 100mA collector current. The maximum collector-emitter voltage (VCEO) is 50V, and the continuous collector current rating is 100mA. Power dissipation is limited to 200mW. The emitter-base voltage (VEBO) is rated at 10V. The operating temperature range spans from -65°C to 150°C, suitable for harsh environments. The part is housed in an SC-88-6 surface mount package, supplied on reel with 3000 units per reel. This configuration is ideal for compact, low-power circuits where space and component count are critical.
The maximum collector-emitter voltage (VCEO) is 50V.
The continuous collector current is 100mA.
The package is SC-88-6, a surface mount package.
The operating temperature range is from -65°C to 150°C.
The typical input resistor is 47 kohm.
The minimum DC current gain (hFE) is 80 at 100mA.
The power dissipation is 200mW.