| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,860 pcs
|
5860 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,860 pcs
|
5860 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NXP Semiconductors PUMB20,115 is a dual PNP pre-biased transistor array suitable for various electronic applications. This component is designed for surface mount installation and comes in a compact SOT-363 package.
Key electrical characteristics include a maximum operating voltage of 50V and a continuous collector current of 100mA. The device offers a power dissipation rating of 300mW. It features a minimum DC current gain (hFE) of 30 at 20mA and 5V, with a Vce saturation of 150mV maximum at 500µA and 10mA. An integrated 2.2kΩ resistor is also present.
This transistor array is specified with RoHS3 compliance and an MSL 1 rating. Its small footprint and pre-biased configuration make it a convenient choice for simplifying circuit designs where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PUMB20,115 has an operating voltage of 50V.
The PUMB20,115 is supplied in a 6-TSSOP, SC-88, SOT-363 package.
The minimum DC current gain (hFE) is 30 at 20mA and 5V.
The Vce saturation is a maximum of 150mV at 500µA and 10mA.