| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PUMB10 is a PNP/PNP double Resistor-Equipped Transistor (RET) housed in a compact SOT363 (SC-88) SMD plastic package. This component is designed for low current peripheral driver applications and for controlling IC inputs, simplifying circuit design by reducing component count and pick and place costs.
Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA per transistor. It features built-in bias resistors with a typical R1 value of 2.2 kΩ and an R2/R1 ratio of 21. The device is AEC-Q101 qualified, indicating its suitability for automotive applications.
With a maximum junction temperature of 150 °C and an ambient temperature range of -65 °C to 150 °C, the PUMB10 is suitable for various operating environments. The total power dissipation is rated at 200 mW per transistor and 300 mW per device when mounted on an FR4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PUMB10 is -50 V when the base is open.
The PUMB10 has a maximum output current (IO) capability of -100 mA per transistor.
The PUMB10 features a typical R1 bias resistor value of 2.2 kΩ and an R2/R1 bias resistor ratio of 21.
The PUMB10 is supplied in a SOT363 (SC-88) surface-mount plastic package.
Yes, the PUMB10 transistor is AEC-Q101 qualified.