| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
560 pcs
|
560 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PTZTE255.6B is a Zener diode from ROHM Semiconductor's PTZ series, designed for voltage regulation and surge absorption applications. It offers a nominal zener voltage of 5.6V with a range of 5.6V to 6.3V, and a maximum power dissipation of 1W.
The device features a low maximum impedance of 8Ω and a reverse leakage current of 20µA at 1.5V. It is constructed using silicon epitaxial planar technology and can withstand high surge levels.
The PTZTE255.6B is housed in a surface mount DO-214AC (SMA) package, also designated as ROHM PMDS. It has an operating junction temperature range up to 150°C and is suitable for compact PCB designs.
Typical applications include voltage regulation, voltage limiting, and surge absorption in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1,500+ | $0.20 | $0.20 |
| 3,000+ | $0.19 | $0.19 |
| 4,500+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal zener voltage is 5.6V, with a range of 5.6V to 6.3V.
The maximum power dissipation is 1W.
The device is available in a DO-214AC (SMA) surface mount package, also known as ROHM PMDS.
The maximum impedance (Zzt) is 8Ω.
The reverse leakage current is 20µA at 1.5V.
The maximum junction temperature is 150°C.
Surface mount.