| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,333 pcs
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6333 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
231 pcs
|
231 pcs | On Request | 1 | On Request | On Request | 1409+ | On Request | On Request |
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The Infineon PTMA210152M V1 is a high-performance RF Power LDMOS Amplifier designed for demanding applications. It operates within a frequency range of 1.9GHz to 2.2GHz, delivering a typical output power of 100mW with a P1dB of 20dBm. The amplifier provides a typical gain of 28dB and a nominal power output of 20W.
This component is housed in a DSO-20 package, suitable for surface mount applications. Its robust design and specifications make it suitable for various RF power amplification tasks. The device is manufactured by Infineon Technologies, a recognized leader in semiconductor solutions.
Key electrical characteristics include its operating frequency range and power handling capabilities. The DSO-20 package facilitates integration into compact designs. Further details on specific operating conditions and performance metrics can be found in the manufacturer's documentation.
The PTMA210152M V1 operates from 1.9GHz to 2.2GHz.
The typical gain is 28dB.
The amplifier has a nominal power output of 20W and a typical P1dB of 20dBm at 100mW.
It is supplied in a DSO-20 package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.