| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Infineon Technologies PTFA081501E V1 is a Radio Frequency (RF) Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) Field-Effect Transistor (FET). This component is designed for RF power applications, featuring a rated voltage of 65V and operating at a frequency of 900MHz.
Key electrical characteristics include a power output of 150W and a gain of 18dB. The transistor is tested at 28V and has a current rating of 10µA, with a test current of 950 mA. It is constructed using LDMOS technology.
The PTFA081501E V1 comes in a 2-Flatpack, Fin Leads, Flanged package, suitable for surface mounting. This packaging style is designed for efficient heat dissipation in high-power RF applications.
This obsolete part is suitable for applications requiring robust RF performance at 900MHz. Its specifications make it a candidate for power amplification stages in various RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the PTFA081501E V1 is 65 V.
The PTFA081501E V1 operates at a frequency of 900 MHz.
The power output of the PTFA081501E V1 is 150 W.
The gain of the PTFA081501E V1 is 18 dB.
The PTFA081501E V1 uses a 2-Flatpack, Fin Leads, Flanged package.
The PTFA081501E V1 is a surface mount device.