SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NXP Semiconductors PSMN9R0-30YL is a logic-level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified for industrial and communications applications, offering high efficiency due to low switching and conduction losses.
Key electrical specifications include a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 61A at 25°C. The drain-source on-state resistance (RDSon) is a low 6.168 mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 15A at 25°C junction temperature.
The MOSFET is suitable for logic-level gate drive sources. Its applications include Class-D amplifiers, DC-to-DC converters, motor control, and server power supplies. The device is housed in an LFPAK plastic package suitable for surface mounting.
Additional electrical parameters include a peak drain current (IDM) of 223A and a total power dissipation (Ptot) of 46W at 25°C case temperature. The junction temperature (Tj) ranges from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum drain current is 61A.
It comes in an LFPAK surface mount package.
The maximum junction temperature is 175°C.
RoHS3 compliance status is unverified.
