| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1401+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The PSMN3R9-60XSQ from NXP Semiconductors is a standard level N-channel MOSFET designed for industrial, communications, and domestic equipment. It operates with a 60V drain-source voltage and can handle up to 75A of continuous current.
Key electrical characteristics include a low drain-source on-state resistance of 4mOhm at 25A and 10V gate drive, contributing to high efficiency by minimizing switching and conduction losses. The MOSFET is suitable for standard level gate drive applications and features a total gate charge of 103nC.
Packaged in a TO-220F (SOT186A) isolated package, this component is designed for through-hole mounting. It is qualified to 175°C, offering a wide operating temperature range from -55°C to 175°C.
Applications include AC-to-DC power supply equipment, motor control, server power supplies, and synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60 V.
The continuous drain current is rated at 75 A.
The Rds On is a maximum of 4 mOhm at 25A drain current and 10V gate voltage.
The operating temperature range is from -55°C to 175°C (TJ).
It is supplied in a TO-220F package.