BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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8,100 pcs
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8100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The PSMN3R3-80ES from NXP Semiconductors is a high-performance N-Channel MOSFET. It is engineered with a drain-source voltage rating of 80V and a remarkably low on-resistance of 3.3mOhm, making it suitable for applications requiring efficient power handling and minimal conduction losses.
This MOSFET is part of the single transistor family, designed for discrete applications. Its characteristics suggest suitability for power management circuits, motor control, and other switching applications where low on-state resistance and high voltage capability are critical. The specific package and mounting type would need to be confirmed from the datasheet for integration into a PCB design.
Key electrical parameters include its ability to handle 80V between drain and source, and its low Rds(on) of 3.3mOhm, indicating efficient current conduction. Further details on gate charge, threshold voltage, and continuous drain current are available in the manufacturer's datasheet.
The drain-source voltage for the PSMN3R3-80ES MOSFET is 80V.
The on-resistance of the PSMN3R3-80ES MOSFET is 3.3mOhm.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.