BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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2,490 pcs
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2490 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The PSMN2R8-80BS from NXP Semiconductors is a standard level N-channel MOSFET qualified to 175°C, housed in a D2PAK package. This device is engineered for high efficiency, offering low switching and conduction losses, making it suitable for standard level gate drive applications.
Key electrical characteristics include an 80V drain-source voltage and a low on-state resistance (RDSon) of 3 mΩ at 25°C. It supports a continuous drain current of up to 120A and a total power dissipation of 306W at 25°C.
This MOSFET is designed and qualified for a wide range of industrial, communications, and domestic equipment. Typical applications include DC-to-DC converters, load switches, motor control, and server power supplies. The D2PAK package is designed for surface mounting.
The maximum drain-source voltage is 80V.
The continuous drain current is 120A at 25°C case temperature with VGS = 10V.
The maximum drain-source on-state resistance is 3 mOhm at VGS = 10V, ID = 25A, and Tj = 25°C.
The operating junction temperature range is -55°C to 175°C.
The PSMN2R8-80BS is available in a D2PAK surface mount package.
The typical total gate charge is 139 nC at VGS = 10V, ID = 75A, and VDS = 40V.