PSMN2R6-30YLC The NXP Semiconductors PSMN2R6-30YLC is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It features a 30V drain-source voltage and low on-state resistance.
Mfr Part #:

PSMN2R6-30YLC

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PSMN2R6-30YLC is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It features a 30V drain-source voltage and low on-state resistance.
✓ Total Stock: 475 pcs
$ Price Range: $2.27

PSMN2R6-30YLC Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
475 pcs
475 pcs On Request 1 On Request On Request On Request On Request On Request

PSMN2R6-30YLC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name

PSMN2R6-30YLC Description

Short technical summary and product information.

The NXP Semiconductors PSMN2R6-30YLC is a logic level enhancement mode N-channel MOSFET in an LFPAK package. This product is optimized for 4.5V gate drive using NextPower Superjunction technology, offering ultra low QG, QGD, and QOSS for high system efficiencies.

 

Key electrical specifications include a drain-source voltage (VDS) of 30V and a maximum junction temperature of 175°C. The drain-source on-state resistance (RDSon) is as low as 2.8mΩ at a gate-source voltage (VGS) of 10V and 25A drain current (ID). It also offers a low RDSon of 3.65mΩ at VGS = 4.5V, ID = 25A, Tj = 25°C.

 

This MOSFET is designed and qualified for a wide range of industrial, communications, and domestic equipment. Its features include high reliability, low parasitic inductance and resistance, and optimized gate drive characteristics.

 

The PSMN2R6-30YLC is housed in a Power SO8 package (LFPAK) suitable for surface mounting. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and sync rectifiers.

PSMN2R6-30YLC Quick Information

Product Type: MOSFET
Canonical Name: N-channel 30 V 2.8mΩ logic level MOSFET
Subcategory: N-Channel

PSMN2R6-30YLC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PSMN2R6-30YLC Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN2R6-30YLC Features

  • N-channel MOSFET in LFPAK package.
  • 30V drain-source voltage rating.
  • Low on-state resistance of 2.8mΩ.
  • Optimized for 4.5V gate drive.
  • Qualified to 175°C for high reliability.

PSMN2R6-30YLC Applications

  • Used in DC-to-DC converters.
  • Suitable for lithium-ion battery protection.
  • Ideal for load switching applications.
  • Applicable for server power supplies.
  • Can be used for sync rectifier circuits.

PSMN2R6-30YLC FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PSMN2R6-30YLC?

The maximum drain-source voltage is 30 V.

What is the drain current rating for this MOSFET?

The drain current is rated at 100 A.

What package does the PSMN2R6-30YLC come in?

It is packaged in an LFPAK; Power-SO8 surface-mount package.

What is the RDSon value at VGS = 10V?

The RDSon value at VGS = 10V is 2.8 mΩ.

What is the junction temperature range for this device?

The junction temperature range is from -55°C to 175°C.

Home

Categories