| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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475 pcs
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475 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The NXP Semiconductors PSMN2R6-30YLC is a logic level enhancement mode N-channel MOSFET in an LFPAK package. This product is optimized for 4.5V gate drive using NextPower Superjunction technology, offering ultra low QG, QGD, and QOSS for high system efficiencies.
Key electrical specifications include a drain-source voltage (VDS) of 30V and a maximum junction temperature of 175°C. The drain-source on-state resistance (RDSon) is as low as 2.8mΩ at a gate-source voltage (VGS) of 10V and 25A drain current (ID). It also offers a low RDSon of 3.65mΩ at VGS = 4.5V, ID = 25A, Tj = 25°C.
This MOSFET is designed and qualified for a wide range of industrial, communications, and domestic equipment. Its features include high reliability, low parasitic inductance and resistance, and optimized gate drive characteristics.
The PSMN2R6-30YLC is housed in a Power SO8 package (LFPAK) suitable for surface mounting. Applications include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and sync rectifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The drain current is rated at 100 A.
It is packaged in an LFPAK; Power-SO8 surface-mount package.
The RDSon value at VGS = 10V is 2.8 mΩ.
The junction temperature range is from -55°C to 175°C.