BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,442 pcs
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1442 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
145 pcs
|
145 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The PSMN2R0-30YLD is a logic-level gate drive N-channel enhancement mode MOSFET from NXP Semiconductors, utilizing NextPowerS3 Technology. It is designed for high efficiency applications, particularly at high switching frequencies, due to its ultra-low QG, QGD, and QOSS.
Key electrical specifications include a drain-source voltage (VDS) of 30V and a low on-state resistance (RDSon) of 2.0 mΩ at a gate-source voltage of 4.5V and 25A drain current. The device also features superfast switching with soft-recovery characteristics and low spiking and ringing for EMI-sensitive designs.
Packaged in an LFPAK56 (Power-SO8) surface-mount package, this MOSFET is optimized for 4.5V gate drive and is wave solderable with exposed leads for visual inspection. Its applications include on-board DC-to-DC solutions, secondary-side synchronous rectification, voltage regulator modules (VRM), and power delivery for various system components.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The maximum drain current is 100 A.
The package type is LFPAK56, also known as Power-SO8.
The total power dissipation is 142 W.
The maximum junction temperature is 175 °C.