Mfr Part #:

PSMN2R0-30YL

The NXP Semiconductors PSMN2R0-30YL is a logic level N-channel enhancement mode MOSFET. It features high efficiency due to low switching and conduction losses and is suitable for logic level gate drive sources.

✓ Total Stock: 1,178 pcs

$ Price Range: $2.60

PSMN2R0-30YL Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,158 pcs On Request	1158 pcs	On Request	1	On Request	On Request	1742+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	20 pcs On Request	20 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PSMN2R0-30YL Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors

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PSMN2R0-30YL Description

Short technical summary and product information.

The PSMN2R0-30YL from NXP Semiconductors is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This MOSFET is designed and qualified for use in industrial and communications applications, offering high efficiency through reduced switching and conduction losses.

Key electrical specifications include a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 100 A at 25°C. The drain-source on-state resistance (RDSon) is a low 2 mΩ at 10V VGS, 15A ID, and 25°C Tj. Dynamic characteristics include a gate-drain charge (QGD) of 7.5 nC and a total gate charge (QG(tot)) of 30 nC under specified conditions.

This device is housed in an LFPAK package, a plastic single-ended surface-mounted type with 4 leads. Its operating junction temperature ranges from -55°C to 175°C. The MOSFET is suitable for applications such as Class-D amplifiers, DC-to-DC converters, motor control, and server power supplies.

PSMN2R0-30YL Quick Information

Product Type: MOSFET

Series: PSMN

Canonical Name: N-channel 30 V 2 mΩ logic level MOSFET

Subcategory: N-channel MOSFET

PSMN2R0-30YL Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PSMN2R0-30YL Estimated Pricing

Qty	Low	High
1+	$2.60	$2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN2R0-30YL Features

Logic level N-channel enhancement mode MOSFET.
High efficiency due to low losses.
Suitable for logic level gate drive.
LFPAK surface mount package.
Designed for industrial and communications.

PSMN2R0-30YL Applications

Ideal for Class-D amplifiers.
Used in DC-to-DC converters.
Suitable for motor control.
Applied in server power supplies.

PSMN2R0-30YL FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the PSMN2R0-30YL?

The drain-source voltage is 30 V.

What is the maximum continuous drain current for the PSMN2R0-30YL?

The maximum continuous drain current is 100 A at 25°C and VGS = 10V, limited by the package.

What is the typical on-state resistance (RDSon) of the PSMN2R0-30YL?

The typical drain-source on-state resistance is 2 mΩ at VGS = 10V, ID = 15A, and Tj = 25°C.

What type of package is the PSMN2R0-30YL in?

The PSMN2R0-30YL is in an LFPAK package, which is a plastic single-ended surface-mounted package with 4 leads.

What are the applications for the PSMN2R0-30YL MOSFET?

This MOSFET is suitable for Class-D amplifiers, DC-to-DC converters, motor control, and server power supplies.