| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,150 pcs
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3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PSMN1R2-30YLC from NXP Semiconductors is a logic level enhancement mode N-channel MOSFET. It is housed in a reliable LFPAK package, qualified to 175°C, making it suitable for a wide range of industrial, communications, and domestic equipment.
Key electrical characteristics include a drain-source voltage of 30V and an ultra-low drain-source on-state resistance (RDSon) of 1.25mΩ at a gate-source voltage of 10V and 25A drain current. It is optimized for 4.5V gate drive using NextPower Superjunction technology, offering ultra-low gate charge (QG), gate-drain charge (QGD), and output charge (QOSS) for high system efficiencies.
This MOSFET is designed for applications such as DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and synchronous rectification. Its low parasitic inductance is also a beneficial feature for high-frequency designs.
The component is surface-mounted in an LFPAK (Power-SO8) package. It is designed for high reliability and performance in demanding applications.
The maximum drain-source voltage is 30V.
It uses an LFPAK or Power-SO8 surface-mount package.
The junction temperature range is -55°C to 175°C.
The continuous drain current is 100A at a mounting base temperature of 25°C.
The typical total gate charge is 38nC at a gate-source voltage of 4.5V.