| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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180 pcs
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180 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NXP Semiconductors PSMN1R1-30PL is a logic-level N-channel MOSFET housed in a TO-220 package. This component is qualified for high-temperature operation up to 175 °C and is designed for a wide array of industrial, communications, and domestic equipment.
Key electrical specifications include a maximum drain-source voltage of 30V and a low on-state resistance (RDSon) of 1.3 mΩ at 25°C junction temperature and 10V gate-source voltage. It also offers a typical gate-drain charge of 37 nC and a total gate charge of 118 nC under specified conditions.
With a total power dissipation of 338W at 25°C case temperature, this MOSFET is suitable for applications such as DC-to-DC converters, load switching, motor control, and server power supplies. Its design prioritizes high efficiency through low switching and conduction losses, making it suitable for logic-level gate drive sources.
The MOSFET is supplied in a TO-220AB package, a standard plastic single-ended package designed for heatsink mounting with three leads. The mounting base is connected to the drain.
The maximum drain-source voltage is 30 V.
The typical on-state resistance is 1.3 mΩ at 25°C.
The maximum junction temperature is 175 °C.
The PSMN1R1-30PL is supplied in a TO-220AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.