BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The PSMN0R9-25YLC is a 25V N-channel MOSFET manufactured by NXP Semiconductors. It is designed for low-voltage power switching applications with a maximum drain-source voltage of 25V and a typical on-resistance of 0.75mΩ at VGS=10V and ID=25A. The on-resistance is also specified at VGS=4.5V as 0.95mΩ typical.
Gate charge characteristics include a total gate charge of 51nC and a gate-drain charge of 14nC, both measured at VGS=4.5V, ID=25A, and VDS=12V. The device can operate over a junction temperature range of -55°C to 175°C and has a typical power dissipation of 272W at a case temperature of 25°C.
The MOSFET is packaged in an LFPAK (Power-SO8) surface mount package, suitable for automated assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The standard package quantity is 3000 units per reel.
The maximum drain-source voltage is 25 V.
The package is LFPAK (Power-SO8) surface mount.
The junction temperature range is -55°C to 175°C.
0.75 mΩ typical at VGS=10V, ID=25A, Tj=25°C.
51 nC typical at VGS=4.5V, ID=25A, VDS=12V.
14 nC typical at VGS=4.5V, ID=25A, VDS=12V.
272 W typical at case temperature 25°C.