| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
502 pcs
|
502 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel |
The NXP Semiconductors PSMN070-200B is an N-channel MOSFET designed for power applications. It features a breakdown voltage of 200V and can handle a continuous drain current of 35A at 25°C. The MOSFET exhibits a low on-resistance of 0.07 Ohm, contributing to efficient power transfer.
This component is suitable for various switching and amplification tasks within electronic circuits. Its specifications suggest utility in power management, motor control, or general-purpose switching applications where high current and voltage handling are required. Further details regarding package type, operating temperature, and specific application suitability would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 200V.
The continuous drain current is 35A.
The on-resistance is 0.07 Ohm.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.