| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,744 pcs
|
7744 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
395 pcs
|
395 pcs | On Request | 1 | On Request | On Request | 1716+ | On Request | On Request | |
|
140 pcs
|
140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Nexperia PSMN059-150Y is a high-performance N-Channel MOSFET. It offers a drain-source breakdown voltage of 150V and a continuous drain current of 43A, with a low on-resistance of 59 mOhms.
This MOSFET operates in enhancement mode and is suitable for a wide range of power management applications. It features a compact LFPAK-4 package, designed for surface-mount (SMD) applications, with dimensions of 5mm in length and 4.1mm in width.
Key electrical characteristics include a gate-source breakdown voltage of 20V and a power dissipation of 113W. The device operates across a temperature range of -55C to +150C. It is supplied on a reel, with a factory pack quantity of 1500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 43A.
The drain-source breakdown voltage is 150V.
The drain-source on-resistance is 59 mOhms.
The operating temperature range is -55C to +150C.
The PSMN059-150Y is supplied in an LFPAK-4 package.