BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NXP Semiconductors PSMN040-100MSE is an N-channel MOSFET specifically designed for high power Power-over-Ethernet (PoE) applications, supporting systems delivering up to 90W. This component features a drain-source voltage rating of 100V and a low drain-source on-state resistance of 36.6 mΩ at a drain current of 10A and 25°C junction temperature.
Key benefits include enhanced forward biased safe operating area for superior linear mode operation and low conduction losses due to its low RDSon. The MOSFET is housed in an ultra-reliable LFPAK33 package, providing superior thermal and ruggedness performance. It is suitable for IEEE802.3at and proprietary PoE solutions requiring high power density and thermal management.
With a total power dissipation of 91W at 25°C, the PSMN040-100MSE is engineered for demanding power sourcing equipment (PSE) requirements. Its static and dynamic characteristics, including gate charge and avalanche ruggedness, are detailed in the datasheet for detailed design considerations.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 30A at Tj = 25°C with VGS = 10V.
The typical on-state resistance is 29.4 mΩ at VGS = 10V, ID = 10A, Tj = 25°C.
It is available in the LFPAK33 surface mount package.
The typical total gate charge is 30 nC at VGS = 10V, ID = 10A, VDS = 50V, Tj = 25°C.