| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,512 pcs
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4512 pcs | On Request | 1 | On Request | On Request | 16+08+ | On Request | On Request |
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The NXP Semiconductors PSMN035-150P is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This standard level FET is housed in a TO-220AB plastic package.
Key electrical specifications include a maximum drain-source voltage of 150V and a maximum continuous drain current of 50A at 25°C. The drain-source on-state resistance (RDSon) is a low 30.3 mOhm typical at 25°C and 25A, contributing to low conduction losses. It is suitable for high-frequency applications due to its fast switching characteristics.
This MOSFET is designed and qualified for use in computing, communications, consumer, and industrial applications, including switched-mode power supplies. The TO-220AB package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
The typical drain-source on-state resistance is 30.3 mOhm at 25A and 25°C.
The PSMN035-150P is supplied in a TO-220AB package.
This MOSFET is designed for use in computing, communications, consumer, and industrial applications, including switched-mode power supplies.