| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,071 pcs
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2071 pcs | On Request | 1 | On Request | On Request | 0427+ | On Request | On Request |
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The PSMN025-100D from Nexperia is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured using TrenchMOS technology. This device is designed for computing, communications, consumer, and industrial applications.
Key electrical characteristics include a drain-source voltage of up to 100V and a continuous drain current of 47A at 25°C. It features a low on-state resistance of 22.5mΩ typical at 25A and 10V gate-source voltage, contributing to low conduction losses. The transistor also exhibits fast switching characteristics, making it suitable for high-frequency applications.
This FET is housed in a DPAK (SOT428) surface-mount plastic package with 3 leads. The mounting base is connected to the drain. Its design prioritizes higher operating power due to low thermal resistance and low conduction losses due to its low on-state resistance.
Applications for the PSMN025-100D include DC-to-DC converters and switched-mode power supplies.
The maximum drain-source voltage is 100V.
The continuous drain current is 47A at 25°C.
The typical on-state resistance is 22.5mΩ.
The PSMN025-100D is supplied in a DPAK (SOT428) surface-mount plastic package.
The PSMN025-100D is designed for DC-to-DC converters and switched-mode power supplies, as well as computing, communications, consumer, and industrial applications.