Mfr Part #:

PSMN015-100P

The NXP Semiconductors PSMN015-100P is an N-channel TrenchMOS SiliconMAX standard level FET. It offers a drain-source voltage of 100V and a continuous drain current of 75A.

✓ Total Stock: 148 pcs

PSMN015-100P Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Husky International Electronic ✓ Non-Authorised Inventory information	148 pcs On Request	148 pcs	On Request	1	On Request	On Request	N/A	On Request	On Request

PSMN015-100P Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors

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PSMN015-100P Description

Short technical summary and product information.

The PSMN015-100P from NXP Semiconductors is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This device is designed for use in computing, communications, consumer, and industrial applications.

Key electrical characteristics include a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 75A at 25°C with a gate-source voltage (VGS) of 10V. The drain-source on-state resistance (RDSon) is a low 121.5mΩ typical at 25A and 25°C. The FET is rated for avalanche ruggedness and features low conduction losses due to its low on-state resistance.

Packaged in a standard TO-220AB plastic single-ended package, this component is suitable for through-hole mounting. The mounting base is connected to the drain. The device operates within a junction temperature range of -55°C to 175°C and has a storage temperature range of -55°C to 175°C.

This MOSFET is designed for applications such as DC-to-DC converters and switched-mode power supplies. It offers benefits like low conduction losses and rated avalanche ruggedness.

PSMN015-100P Quick Information

Product Type: MOSFET

Series: SiliconMAX

Canonical Name: N-channel TrenchMOS SiliconMAX standard level FET

Subcategory: N-channel

PSMN015-100P Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PSMN015-100P Features

N-channel TrenchMOS SiliconMAX standard level FET
100V drain-source voltage
75A continuous drain current
121.5mOhm typical on-state resistance
TO-220AB package for through-hole mounting

PSMN015-100P Applications

Suitable for DC-to-DC converters
Ideal for switched-mode power supplies
Designed for computing applications
Used in communications systems
Applicable in consumer electronics

PSMN015-100P FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the PSMN015-100P?

100V.

What is the package type of the PSMN015-100P?

TO-220AB.

What is the operating junction temperature range?

-55°C to 175°C.

What is the continuous drain current rating?

-75A at 25°C case temperature.

What is the typical drain-source on-state resistance?

121.5 mOhm at VGS=10V, ID=25A.

What is the maximum power dissipation?

300W at 25°C case temperature.